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1/12 product preview january 2005 this is preliminary information on a new product now in development. details are subject to change without notice . stp25nm50n - stf25nm50n STB25NM50N/-1 - stw25nm50n n-channel 550v @tjmax - 0.12 ? - 21.5 a to-220/fp/d2/i2pak/to-247 second generation mdmesh? mosfet table 1: general features world?s lowest on resistance typical r ds (on) = 0.12 ? high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge low gate input resistance description the stp25nm50n is realized with the second generation of mdmesh technology. this revolu- tionary mosfet associates a new vertical struc- ture to the company's strip layout to yield the world's lowest on-resistance and gate charge. it is therefore suitable for the most demanding high ef- ficiency converters applications the mdmesh? ii family is very suitable for in- creasing power density of high voltage converters allowing system miniaturization and higher effi- ciencies. table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss (@tj max ) i d r ds(on) STB25NM50N-1 stf25nm50n stp25nm50n stw25nm50n STB25NM50Nt4 550v 550v 550v 550v 550v 21.5 a 21.5 a 21.5 a 21.5 a 21.5 a 0.150 ? 0.150 ? 0.150 ? 0.150 ? 0.150 ? 1 2 3 1 2 3 to-220 to-247 1 2 3 i2pak 1 2 3 to-220fp 1 3 d2pak sales type marking package packaging stp25nm50n p25nm50n to-220 tube stf25nm50n f25nm50n to-220fp tube STB25NM50N-1 b25nm50n i 2 pa k t ube stw25nm50n w25nm50n to-247 tube STB25NM50Nt4 b25nm50n d 2 pak tape & reel rev. 1
stp25nm50n - stf25nm50n - STB25NM50N/-1 - stw25nm50n 2/12 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 21.5 a, di/dt 400 a/s, v dd v (br)dss , t j t jmax. (*) limited only by maximum temperature allowed table 4: thermal data table 5: avalanche characteristics symbol parameter value unit to-220/d2pak/i 2 pak/ to-247 to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 21.5 21.5 (*) a i d drain current (continuous) at t c = 100 c 13.6 13.6 (*) a i dm ( ) drain current (pulsed) 86 86 (*) a p tot total dissipation at t c = 25 c 160 40 w derating factor 1.28 0.32 w/ c dv/dt(1) peak diode recovery voltage slope tbd v/ns t stg storage temperature ? 55 to 150 c t j max. operating junction temperature 150 c to-220/d2pak/ i 2 pak/to-247 to-220fp rthj-case thermal resistance junction-case max 0.78 3.1 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) tbd a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) tbd mj
3/12 STB25NM50N/-1 - stw25nm50n - stp25nm50n - stf25nm50n electrical characteristics (t case =25 c unless otherwise specified) table 6: on/off table 7: dynamic (*) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss table 8: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (*) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 12.5a 0.12 0.150 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds 15 v , i d =10.75a 19 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 2280 450 50 pf pf pf c oss eq. (*) equivalent output capacitance v gs = 0v, v ds = 0v to 400v tbd pf t d(on) t r t d(off) t f turn-on delay time rise time off-voltagerise time fall time v dd =250 v, i d = 10.75 a r g =4.7 ? v gs = 10 v (see figure 3) tbd tbd tbd tbd ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400v, i d =21.5 a, v gs = 10v, (see figure 7) tbd tbd tbd nc nc nc r g gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 1.9 ? symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) 21.5 86 a a v sd (1) forward on voltage i sd = 21.5 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 21.5 a, di/dt = 100 a/s v dd = 100 v, t j = 25 c (see figure 5) tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 21.5a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 5) tbd tbd tbd ns c a
stp25nm50n - stf25nm50n - STB25NM50N/-1 - stw25nm50n 4/12 figure 3: unclamped inductive load test cir- cuit figure 4: switching times test circuit for re- sistive load figure 5: test circuit for inductive load switching and diode recovery times figure 6: unclamped inductive wafeform figure 7: gate charge test circuit
5/12 STB25NM50N/-1 - stw25nm50n - stp25nm50n - stf25nm50n dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stp25nm50n - stf25nm50n - STB25NM50N/-1 - stw25nm50n 6/12 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
7/12 STB25NM50N/-1 - stw25nm50n - stp25nm50n - stf25nm50n information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ? p 3.55 3.65 0.140 0.143 ? r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
stp25nm50n - stf25nm50n - STB25NM50N/-1 - stw25nm50n 8/12 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
9/12 STB25NM50N/-1 - stw25nm50n - stp25nm50n - stf25nm50n to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3
stp25nm50n - stf25nm50n - STB25NM50N/-1 - stw25nm50n 10/12 tape and reel shipment (suffix ? t4 ? )* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
11/12 STB25NM50N/-1 - stw25nm50n - stp25nm50n - stf25nm50n table 9: revision history date revision description of changes 30-nov-2004 1 first release.
stp25nm50n - stf25nm50n - STB25NM50N/-1 - stw25nm50n 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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